A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo / 4H–SiC Schottky contact

Abstract

The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H–SiC Schottky diode in 298–498 K temperature range has been investigated. Due to the barrier height inhomogeneities that prevail at the interface of the Schottky diode, a Gaussian distribution of the barrier height is assumed. We have extracted simultaneously, for every temperature, all the parameters characterizing the barrier height such as the mean barrier height \( \bar{\phi }_0}} \) , the coefficients ρ₂, ρ₃ quantifying the deformation of the barrier height, the corresponding temperature T₀ modeling the divergence of the ideality factor n from the unity, the standard deviation of the Gaussian distribution of the barrier σ_s and also the series resistance R_s using a vertical optimization process on the current without any graphical extraction about ρ₂, ρ₃, \( \bar{\phi }_0}} \) , σ_s and R_s. The extracted parameters like ( \( \bar{\phi }_0}} \) , ρ₂, ρ₃, σ_s, R_s) were found to be a temperature dependent. Moreover, an excellent agreement was obtained between the I–V–T plots calculated with the extracted parameters using a vertical optimization process with the experimental one.

http://bit.ly/2UPZkhG